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2SC2855, 2SC2856
Silicon NPN Epitaxial
ADE-208-1079 (Z) 1st. Edition Mar. 2001 Application
* Low frequency low noise amplifier * Complementary pair with 2SA1190 and 2SA1191
Outline
TO-92 (1)
1. Emitter 2. Collector 3. Base 3 2 1
2SC2855, 2SC2856
Absolute Maximum Ratings (Ta = 25C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg 2SC2855 90 90 5 100 -100 400 150 -55 to +150 2SC2856 120 120 5 100 -100 400 150 -55 to +150 Unit V V V mA mA mW C C
2SC2855, 2SC2856
Electrical Characteristics (Ta = 25C)
2SC2855 Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Symbol Min V(BR)CBO V(BR)CEO V(BR)EBO I CBO I EBO hFE*
1
2SC2856 Max Min -- -- -- 0.1 0.1 800 120 120 5 -- -- 250 Typ -- -- -- -- -- -- Max Unit -- -- -- 0.1 0.1 800 V V V A A Test conditions I C = 10 A, IE = 0 I C = 1 mA, RBE = I E = 10 A, IC = 0 VCB = 70 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA*2 I C = 10 mA, IB = 1 mA*2
Typ -- -- -- -- -- --
90 90 5 -- -- 250 -- -- -- -- -- --
VCE(sat)
0.05 0.10 -- 0.7 310 3 1.0 -- -- -- -- -- -- -- --
0.05 0.10 V 0.7 310 3 1.0 -- -- V MHz pF dB dB
Base to emitter saturation VBE(sat) voltage Gain bandwidth product Collector output capacitance Noise figure fT Cob NF
VCE = 6 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 6 V, IC = 0.1 mA, Rg = 10 k, f = 1 kHz VCE = 6 V, IC = 0.1 mA, Rg = 10 k, f = 10 Hz
0.15 1.5 0.2 0.7 2.0 --
0.15 1.5 0.2 0.7 2.0 --
Noise voltage referred to input
en
--
nV/Hz VCE = 6 V, IC = 10 mA, Rg = 0, f = 1 kHz
Notes: 1. The 2SC2855 and 2SC2856 are grouped by h FE as follows. 2. Pulse test D 250 to 500 E 400 to 800
2SC2855, 2SC2856
Maximum Collector Dissipation Curve Collector Power Dissipation PC (mW) 600 20 Typical Output Characteristics
26 24 22
20 18 16 14 12 10
400
Collector Current IC (mA)
16
PC
12
= 0 40 m W
8
200
4
8 6 4 2 A IB = 0
0
50 100 Ambient Temperature Ta (C)
150
0
20 40 60 80 100 Collector to Emitter Voltage VCE (V)
Typical Output Characteristics 10
Typical Transfer Characteristics 100 Collector Current IC (mA) VCE = 6 V Pulse Ta = 75C 10 25C -25C 1.0
18
Collector Current IC (mA) 8
16 14
6
12
10 8
4
6
2
4 2 A
IB = 0
0 4 8 12 16 20 Collector to Emitter Voltage VCE (V)
0.1 0 0.2 0.4 0.6 0.8 1.0 Base to Emitter Voltage VBE (V)
2SC2855, 2SC2856
Collector Cut-Off Current vs. Collector to Base Voltage 1,000 Collector Cut-Off Current ICBO (pA)
75 C
Collector Cut-Off Current vs. Collector to Emitter Voltage 1,000 Collector Cut-Off Current ICEO (nA)
100
Ta
=
25
-25
100
Ta
=7
5C
25
10
10
-25
1.0
1.0
0.1 0 20 40 60 80 100 Collector to Base Voltage VCB (V)
0.1 0 20 40 60 80 100 Collector to Emitter Voltage VCE (V)
Emitter Cut-Off Current vs.Emitter to Base Voltage Collector to Emitter Breakdown Voltage V(BR)CER (V) 1,000 Emitter Cut-Off Current IEBO (pA) 190
Collector to Emitter Breakdown Voltage vs. Base to Emitter Resistance Typical Value IC = 1 mA
C
100
Ta
=
75
180
25
170
-2
10
5
160
1.0
150
0.1 0 2 4 6 8 Emitter to Base Voltage VEB (V) 10
140 10
100 1k 10 k 100 k Base to Emitter Resistance RBE ()
2SC2855, 2SC2856
DC Current Transfer Ratio vs. Collector Current Ta = 75C 25 -25 Collector to Emitter Saturation Voltage VCE(sat) (V) 1,000 DC Current Transfer Ratio hFE Collector to Emitter Saturation Voltage vs. Collector Current 1.0 Pulse IC = 10 IB 0.3
300
100
0.1 Ta = 75C 0.03 25 -25
30 VCE = 12 V Pulse 10 1 3 10 30 Collector Current IC (mA) 100
0.01 1 3 10 30 Collector Current IC (mA) 100
Base to Emitter Saturation Voltage vs. Collector Current 10 Base to Emitter Saturation Voltage VBE(sat) (V) Gain Bandwidth Product fT (MHz) Pulse IC = 10 IB 3 1,000
Gain Bandwidth Product vs. Collector Current VCE = 6 V 500
200 100 50
1.0
Ta =-25C
75 25
0.3
20 10 0.5
0.1 1 3 10 30 Collector Current IC (mA) 100
1.0 2 5 10 20 Collector Current IC (mA)
50
2SC2855, 2SC2856
Collector Output Capacitance vs. Collector to Base Voltage Collector Output Capacitance Cob (pF) 100 Noise Voltage Referred to Input en (nV/ Hz) IE = 0 f = 1 MHz 30 10 VCE = 6 V Rg = 0 f = 1 kHz 3 Noise Voltage Referred to Input vs. Collector Current
10
1.0
3
0.3
1 1 3 10 30 100 Collector to Base Voltage VCB (V)
0.1 0.1
0.3 1.0 3 Collector Current IC (mA)
10
Noise Voltage Referred to Input vs. Signal Source Resistance 1,000 Noise Voltage Referred to Input en (nV/ Hz) Noise Voltage Referred to Input en (nV/ Hz) VCE = 6 V f = 1 kHz 100 1.0
Noise Voltage Referred to Input vs. Collector to Emitter Voltage
0.9
IC
10
=
10
m
A
0 1.
1 0.
0.8
0.7 IC = 1 mA Rg = 0 f = 1 kHz 1 3 10 30 100 Collector to Emitter Voltage VCE (V)
1.0
0.6
0.1 10
0.5 100 1k 10 k 100 k Signal Source Resistance Rg ()
2SC2855, 2SC2856
Noise Voltage Referred to Input vs. Frequency 2.0 Noise Voltage Referred to Input en (nV/ Hz) VCE = 6 V Rg = 0 1.6
1.2 IC = 1 mA 10 0.4
0.8
0 10
100 1k 10 k Frequency f (Hz)
100 k
2SC2855, 2SC2856
Package Dimensions As of January, 2001
Unit: mm
4.8 0.4
3.8 0.4
2.3 Max 0.55Max 0.7 0.60 Max
12.7 Min
5.0 0.2
0.5Max
1.27 2.54
Hitachi Code JEDEC EIAJ Mass (reference value)
TO-92 (1) Conforms Conforms 0.25 g
2SC2855, 2SC2856
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products.
Hitachi, Ltd.
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URL
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For further information write to:
Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic Components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 585160
Copyright (c) Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
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